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RIFLE performances, evaluated with different memory devices, allow extremely complex measurements in just few seconds with time limitations imposed only by the device itself. As an example, the following performances can be achieved on a entire sector of 512 k cells of a standard 8 bit Flash memory: a distribution of threshold voltages can be obtained in 4.5 s, considering 50 voltage intervals; a 20 levels 2D map can be obtained in 13 seconds. Program and erase operations depend on several parameters, such as applied waveforms and algorithms, sector dimension and verify options. A typical total time required to program and verify the entire sector with 1 pulse applied to each cell is about 1.3 s, while the erase and verify operation with 37 pulses is performed in about 1.2 seconds. The threshold voltage of all cells in the sector can be computed in just 2.5 minutes with a voltage resolution of 20 mV. 2D and 3D current characteristics of memory cells can be also computed in short times. For example a 100k point Id (Vgs,Vds) characteristic is executed in 3.5 s. Many more specific analysis can be performed in short times, such as the identification of cells with specific characteristic (threshold voltage or gain over or below a user determined value, the N cells with the lowest or highest threshold voltages or gains,..). For example, the localization of 1000 cells whose threshold voltages are below a determined value can be done in 0.2 s. Thanks to these very short computational times the behavior of the MUT can be deeply investigated during a complete measurement cycle. |